We use cookies to make your experience better.
To comply with the new e-Privacy directive, you agree to the privacy policy and our use of cookies.
Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR4
SKU
KVR32N22S6/4
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 8 internal banks; 2 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- RoHS Compliant and Halogen-Free
| Internal memory type | DDR4 |
|---|---|
| ECC | No |
| Memory form factor | 288-pin DIMM |
| Component for | PC/server |
| SKU | KVR32N22S6/4 |
| EAN | 0740617296075 |
| Manufacturer | Kingston Technology |
| Availability | Out of Stock |
| Product Family | ValueRAM |
| PDF URLs |
View PDF |
ValueRAM's KVR32N22S6/4 is a 512M x 64-bit (4GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.
| Power | |
|---|---|
| Memory voltage | 1.2 V |
| Design | |
| JEDEC standard | Yes |
| Technical details | |
| Country of origin | Taiwan |
| Doesn't contain | Halogen |
| Compliance certificates | RoHS |
| Memory | |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 4 GB |
| Internal memory | 4 GB |
| Component for | PC/Server |
| Memory form factor | 288-pin DIMM |
| CAS latency | 22 |
| Memory voltage | 1.2 V |
| Lead plating | Gold |
| Module configuration | 512M x 64 |
| Row cycle time | 45.75 ns |
| Refresh row cycle time | 350 ns |
| Row active time | 32 ns |
| Memory ranking | 1 |
| ECC | No |
| Internal memory type | DDR4 |
| Programming power voltage (VPP) | 2.5 V |
| Features | |
| Buffered memory type | Unregistered (unbuffered) |
| Memory layout (modules x size) | 1 x 4 GB |
| Internal memory | 4 GB |
| Component for | PC/Server |
| Memory form factor | 288-pin DIMM |
| CAS latency | 22 |
| Memory voltage | 1.2 V |
| Lead plating | Gold |
| Module configuration | 512M x 64 |
| Row cycle time | 45.75 ns |
| Refresh row cycle time | 350 ns |
| Row active time | 32 ns |
| Country of origin | Taiwan |
| Memory ranking | 1 |
| ECC | No |
| Internal memory type | DDR4 |
| Programming power voltage (VPP) | 2.5 V |
| JEDEC standard | Yes |
| Harmonized System (HS) code | 84733020 |
| Operational conditions | |
|---|---|
| Operating temperature (T-T) | 0 - 85 °C |
| Storage temperature (T-T) | -55 - 100 °C |
| Sustainability | |
| Doesn't contain | Halogen |
| Weight & dimensions | |
| Width | 133.3 mm |
| Height | 31.2 mm |
| Logistics data | |
| Harmonized System (HS) code | 84733020 |
| Other features | |
| Country of origin | Taiwan |
| Harmonized System (HS) code | 84733020 |
You may also be interested in
| Product |
Hypertec HYR12112841GBOE (Legacy) memo...
Login for pricing
|
Hypertec 8GB DDR3-1066 memory module 2...
Login for pricing
|
Hypertec 1GB DDR2-667 (Legacy) memory...
Login for pricing
|
Hypertec HYMDL4508G memory module 8 GB...
Login for pricing
|
Hypertec CC411A-HY (Legacy) memory mod...
Login for pricing
|
|---|---|---|---|---|---|
| SKU |
HYR12112841GBOE
|
HYSK31025688GBOE
|
HYF2536481GB
|
HYMDL4508G
|
CC411A-HY
|
| Manufacturer |
Hypertec
|
Hypertec
|
Hypertec
|
Hypertec
|
Hypertec
|
| Internal memory type |
DDR
|
DDR3
|
DDR2
|
DDR3
|
DDR2
|
| ECC |
Y
|
N/A
|
Y
|
N
|
N
|
| Memory form factor |
184-pin DIMM
|
N/A
|
N/A
|
204-pin SO-DIMM
|
200-pin SO-DIMM
|
| Component for |
N/A
|
PC/server
|
PC/server
|
N/A
|
N/A
|
| Internal memory |
N/A
|
N/A
|
N/A
|
8GB
|
N/A
|
| Memory layout (modules x size) |
1 x 1 GB
|
2 x 4 GB
|
1 x 1 GB
|
1 x 8 GB
|
N/A
|