Kingston Technology KSM32SES8/8HE memory module 8 GB 1 x 8 GB DDR4 3200 MT/s ECC

SKU
KSM32SES8/8HE
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8GB DDR4 3200MT/s ECC Unbuffered SODIMM CL22 1Rx8 1.2V 260-pin 8Gbit Hynix E
  • Power Supply: VDD = 1.2V
  • VDDQ = 1.2V
  • VPP = 2.5V
  • VDDSPD = 2.20V to 3.60V
  • Functionality and operations comply with the DDR4 SDRAM datasheet
  • 16 internal banks
  • Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for
  • the banks in the same or different bank group accesses are available
  • Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
  • Bi-Directional Differential Data Strobe
  • 8 bit pre-fetch
  • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
  • Supports ECC error correction and detection
  • On-Die Termination (ODT)
  • Temperature sensor with integrated SPD
  • This product is in compliance with the RoHS directive
  • Per DRAM Addressability is supported
  • Internal Vref DQ level generation is available
  • Write CRC is supported at all speed grades
  • CA parity (Command/Address Parity) mode is supported
  • RoHS Compliant and Halogen-Free
More Information
Memory data transfer rate 3200 MT/s
Internal memory type DDR4
ECC Yes
Memory form factor 260-pin SO-DIMM
SKU KSM32SES8/8HE
EAN 0740617348828
Manufacturer Kingston Technology
Availability In Stock
PDF URLs View PDF
Kingston's KSM32SES8/8HE is a 1G x 72-bit (8GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) w/ parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 260-pin SODIMM uses gold contact fingers.
Power
Memory voltage1.2 V
Design
JEDEC standardYes
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forServer
Memory form factor260-pin SO-DIMM
CAS latency22
Memory voltage1.2 V
Module configuration1024M x 72
Row cycle time45.75 ns
Row active time32 ns
SPD profileYes
Memory ranking1
ECCYes
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forServer
Memory form factor260-pin SO-DIMM
CAS latency22
Memory voltage1.2 V
Module configuration1024M x 72
Row cycle time45.75 ns
Row active time32 ns
SPD profileYes
Memory ranking1
ECCYes
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
JEDEC standardYes
Memory data transfer rate3200 MT/s
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Technical details
Compliance certificatesRoHS
Weight & dimensions
Width69.6 mm
Depth3.7 mm
Height30 mm

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SKU
KSM32SES8/8HE
X7802A-HY
HYMHY4708G
HYMHY7504G
46C7482-HY
46R6023-HY
Manufacturer
Kingston Technology
Hypertec
Hypertec
Hypertec
Hypertec
Hypertec
Internal memory type
DDR4
DDR2
DDR3
DDR3
DDR3
DDR3
ECC
Y
Y
Y
Y
Y
Y
Memory form factor
260-pin SO-DIMM
240-pin DIMM
240-pin DIMM
240-pin DIMM
240-pin DIMM
240-pin DIMM
Component for
Server
N/A
N/A
N/A
PC/server
PC/server
Internal memory
8GB
4GB
8GB
4GB
8GB
N/A
Memory layout (modules x size)
1 x 8 GB
2 x 2 GB
1 x 8 GB
1 x 4 GB
1 x 8 GB
1 x 2 GB